Metal impurities in silicon- and germanium-based technologies : origin, characterization, control and device impact /

This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on...

Full description

Bibliographic Details

Main Authors:	Claeys, Cor L. (Author), Simoen, E. (Eddy) (Author)
Format:	Book
Language:	English
Published:	Cham, Switzerland : Springer International Publishing, [2018]
Series:	Springer series in materials science ; v. 270.
Subjects:	Metals > Inclusions. Semiconductors > Materials. Silicon > Electric properties. Germanium > Electric properties. Metals. Semiconductors. Silicon. Germanium.
Summary:	This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.
Open Policy Finder:	Search Open Policy Finder by ISSN